data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbu6a thru KBU6M technical sp eci f ications of single-phase silicon bridge rectifie r voltage range-5 0 to 1000 volt s current-6.0 amperes fe a t ures ?e l o w leakage ?e l o w forw ard v o lt age ?e surge ov erload r a ting : 25 0 ampere s pea k ?e mold ed structure ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se :molded pla s ti c ?e epoxy : ul 94 v - 0 rate flame ret a rdan t ?e l ead: mil-std-2 02e,me t hod 208 gu aranteed ?e polari ty : sy mbols molded or mar k ed on body ?e m o u n ting po si tio n : any ?e w e ight: 4.8 gram s m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ?e ra ting s a t 25 ambien t tempera t ure unle s s o t herw i se sp eci f ied . ?e single pha se, hal f w a v e , 60 hz, resi stiv e or indu ctiv e load. ?e for capa citiv e lo ad, dera t e curre nt b y 20%. kbu6 a kbu6b kbu6d kbu6g k b u 6 j k b u 6 k KBU6M sy m b ol uni ts m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v o l t s m a x i mum dc blo cking voltage vdc 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum a ver age for w a r d output cur r e nt a t tc = 50 j io 6 . 0 a m p s peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad if sm 2 5 0 a m p s m a x i mum for w a rd voltage d r op per e l ement at 6 . 0 a dc v f 1 . 0 v o l t s @t a = 25 j 5.0 m a xi mum dc rever s e cur r e nt at rated dc bl ocki n g vol t age per element @t a = 100 j ir 500 amp i 2 t rati ng fo r fusing(t<8. 3ms) i 2 t 1 2 7 a2sec t y pi cal juncti on ca pacitance(note 1) c j 1 8 6 p f t y pical therma l r esistance(note2) r c ja 10 j /w oper ati ng temp erature range tj , t stg -55 to + 150 j notes: 1 . mea s ure d at 1 mhz and app lied rev e rse v o ltage of 4 . 0 v o lts 2 . thermal resi stance from junc tion to ambien t and from ju nction to leadmoun ted on p.c.b w i th 0 . 47x 3.0x 0.47?(12x 12mm) co pper pla t e. +6 fp ?+g dg+b fp ?+f e '4 ' 7&"# .760(19.3) .660(16.8) .260(6.6) 0.089(3.6) max unit:inch(mm) rs-6 kbu parameter
http://www.yeashin.com 2 rev.02 20120305 kbu6a thru KBU6M device characteristics '
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